Field-plated D3MOSFET design for breakdown voltage improvement

Magnetic-Field Design Considerations for a Plated-Wire Memory

A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement

In this paper, a near-triangular buried-oxide partial silicon-on-insulator (TB-PSOI) lateral double-diffused MOS field-effect transistor is proposed. The electric field and electrostatic potential in this structure are modified by the gradual buried-oxide thickness increase. The modification includes the addition of a new peak in the electric field in comparison to that of the conventional PSOI...

Breakdown Voltage of High-voltage GaN FETs

GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...

Optimized Fuzzy Controller Design in Unbalanced Voltage Drop Mode for Dynamic Voltage Restorer

The loss of balanced voltages involves a voltage drop due to symmetric three-phase errors, or the initiation of high-power three-phase loads or symmetric three-phase switches. While these events in an unbalanced way lead to asymmetric voltage drops. Voltage drops can cause asymmetric load on the power grid, the occurrence of volatility, and even network power outage. One of the most common ways...

Performance Improvement of Field Effect Diodes (FED) for Nanotechnology

One of the main problems of field effect diode (FED) is the increasing of its turn-off current as the channel length decreases. Thus, in this paper, a new structure is presented which decreases the injection of extra carriers to the channel and also increases the control of the gate over the channel by reducing the portion of channel shared with the source and drain regions and without the need...